Session on "Research Trends in VLSI Design"
13th October 2021
Dronacharya College of Engineering, Gurugram organized a one-day session on “Research Trends in VLSI (Very Large Scale Integration) Design” on 13th October, 2021. The session was attended by 9 faculty members and they learned about the latest advancements in VLSI design.
The keynote speaker of the session was Dr. Ritu Pahwa (Asst. Prof. Vaish College of Engineering). The session began with an overview of the current state of VLSI design and the challenges facing the industry. The speaker highlighted the need for VLSI designers to keep up with the rapidly evolving technological landscape and to find new and innovative ways to optimize performance, reduce power consumption, and increase efficiency.
Several research trends were then discussed, including the use of machine learning (ML) and Artificial Intelligence (AI) in VLSI design. The speaker highlighted the potential of these techniques to enable designers to create more accurate and efficient designs, as well as to automate certain aspects of the design process.
The importance of developing low-power and energy-efficient designs was also discussed. The speaker emphasized that reducing power consumption is becoming increasingly important in the age of the Internet of Things (IoT) and the growing demand for mobile devices. The speaker highlighted several techniques, such as voltage scaling and dynamic voltage and frequency scaling, that are being used to reduce power consumption in VLSI designs.
Another research trend discussed was the use of new materials and technologies in VLSI design. The speaker highlighted the potential of new materials, such as graphene and carbon nanotubes, to enable the creation of smaller and more efficient devices. The use of three-dimensional (3D) technologies, such as 3D stacking and 3D integration, was also discussed as a promising area of research.
Overall, the one-day session on research trends in VLSI design provided valuable insights into the latest advancements in the field.